Sandisk has unveiled High Bandwidth Flash (HBF) for AI workloads which will have a major impact on the $100 billion HBM ...
The new 3D flash memory also ramps up density, with up to 332 memory layers, improving bit density by 59% over ...
Resistive RAM claims to be ideal for consolidating both code storage and data logging in a single external memory.
Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface ...
Companies Preview 10 th Generation 3D Flash Memory Technology Setting A New Benchmark for Performance, Power Efficiency and ...
SanDisk describes HBF as stacking up to 16 layers of BiCS 3D NAND with through-silicon vias (TSVs). A logic layer enables ...
The oversupply of NAND flash has forced memory chipmakers to implement production cuts in response to lower-than-expected orders from PC and smartphone manufacturers. Major players in ...
2h
THE CHOSUNILBO on MSNSamsung’s memory chip leadership at risk as China’s CXMT, YMTC close inChinese chipmakers ChangXin Memory Technologies (CXMT) and Yangtze Memory Technologies (YMTC) are closing in on South Korea’s ...
TOKYO -- Japanese chipmaker Kioxia Holdings has developed NAND flash memory technology with higher storage capacity and 33% faster interface speed, anticipating strong demand from artificial ...
Sandisk wants to pack an extremely large amount of fast flash memory onto GPU accelerators. Large language models would thus ...
SK-Hynix Today’s flash memory is denser and faster than ever, but as AI and new software places ever greater demands on it, the need for more compact memory continues. A new technique for ...
Japanese NAND Flash manufacturer Kioxia unveiled its latest advancement in NAND flash memory technology on February 20, ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results