The new 3D flash memory also ramps up density, with up to 332 memory layers, improving bit density by 59% over ...
Sandisk has unveiled High Bandwidth Flash (HBF) for AI workloads which will have a major impact on the $100 billion HBM ...
Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface ...
Resistive RAM claims to be ideal for consolidating both code storage and data logging in a single external memory.
Companies Preview 10 th Generation 3D Flash Memory Technology Setting A New Benchmark for Performance, Power Efficiency and ...
SanDisk describes HBF as stacking up to 16 layers of BiCS 3D NAND with through-silicon vias (TSVs). A logic layer enables ...
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THE CHOSUNILBO on MSNSamsung’s memory chip leadership at risk as China’s CXMT, YMTC close inChinese chipmakers ChangXin Memory Technologies (CXMT) and Yangtze Memory Technologies (YMTC) are closing in on South Korea’s ...
The oversupply of NAND flash has forced memory chipmakers to implement production cuts in response to lower-than-expected orders from PC and smartphone manufacturers. Major players in ...
TOKYO -- Japanese chipmaker Kioxia Holdings has developed NAND flash memory technology with higher storage capacity and 33% faster interface speed, anticipating strong demand from artificial ...
Sandisk wants to pack an extremely large amount of fast flash memory onto GPU accelerators. Large language models would thus ...
Japanese NAND Flash manufacturer Kioxia unveiled its latest advancement in NAND flash memory technology on February 20, ...
Three new microcontrollers (MCUs) are joining STMicroelectronics’ STM32C0 series, giving designers more flexibility with ...
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