This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo ...

Chinese SiC wafer company exhibits first 300mm N-type SiC substrate at Electronica 2024 At Electronica 2024, Chinese SiC ...

As part of the Biden-Harris Administration’s Investing in America agenda, the Department of Energy (DOE) has announced a $544 ...

Trench technology reduces power loss by about 50 percent compared to conventional planar SiC-MOSFETs Mitsubishi Electric will ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

The automotive semiconductor market is expecting a CAGR of 11 percent between 2023 and 2029 to almost $100 billion at the end ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Company ships early bare die test samples of new low on-resistance devices for automotive traction inverters Toshiba ...

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the ...

The research revealed that power systems with higher WD-RES penetration did not exhibit more blackout vulnerability and when ...

As it becomes the first SiC company to transition to pure-play 200-mm, company announces cost cutting measures to yield ...

The Crescendo platform – a scalable on-demand vertical power architecture for upwards of 3,000A power domains – integrates ...