Compound Semiconductor™ is an Angel Business Communications publication.

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

X-FAB and SMART Photonics recently signed a Memorandum of Understanding to formalise their collaboration. The aim is to ...

Chinese SiC wafer company exhibits first 300mm N-type SiC substrate at Electronica 2024 At Electronica 2024, Chinese SiC wafer company SICC will exhibit what is thought be the first 300mm N-type SiC ...

For its second quarter of fiscal 2025, Wolfspeed targets revenue from continuing operations in a range of $160 million to ...

At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.

Compound Semiconductor™ is an Angel Business Communications publication.

Sivers Semiconductors, the Swedish specialist in photonics and wireless technologies, has announced its Q3 2024 results, ...

For GaN electronics, which serves both the power and RF sectors, evidence of its rapid rise is seen in its double-digit rises ...

Martin McHugh, CEO of CSA Catapult said: “The purpose of CSA Catapult is to deliver long-term economic benefit to the UK, ...

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the PAC5556A + ICeGaN evaluation kit (EVK). This collaboration combines Qorvo's high ...

Looking further ahead, Martinovic expects microLEDs, including those he is helping to pioneer, to penetrate the automotive industry, due to their high level of robustness. MicroLEDs may also take ...